Single Room Vacuum Sintering Furnace For Silicon Carbide Processing Stable
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Single Room Vacuum Sintering Furnace For Silicon Carbide Processing Stable
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Features
Basic Infomation
Place of Origin: CHINA
Brand Name: OEM
Certification: CE Certification
Model Number: OEM
High Light:

industrial vacuum furnace

,

vacuum tempering furnace

Payment & Shipping Terms
Packaging Details: Carton, pallet, wooden case or according to customer's package requirements
Delivery Time: 30 working days
Payment Terms: 30% deposit + 70% T/T before shipping
Supply Ability: 20 sets per month
Specifications
Name: Silicon Carbide Vacuum Sintering Furnace
Type: Induction Furnace
Usage: Sintering Furnace
Power:: 150KW - 550KW
Rated Temperature: 2400℃
Limit Temperature: 2450℃
Product Description

Single Room Vacuum Sintering Furnace For Silicon Carbide Processing
 
 
Silicon Carbide Vacuum Sintering Furnace Feature:
 
1. Silicon carbide sintering furnace is the key equipment of producing silicon carbide material, the silicon carbide products sintered by this equipment has excellent processing property. Products of uniform strength, complete reaction, combination of high content and good quality; with dewaxing system, strengthen the dewaxing effect, more stable atmosphere in the furnace, extending the service life of carbon felt and the heating material. Using resistive or inductive heating, graphite tube heater of long service life, good heating effect, convenient maintenance.
2. Horizontal structure, single room, front door or double doors front and back, simple and convenient operation. The equipment layout is reasonable and compact, small occupying area.
3. The cooling of the furnace body is cooled by natural cooling, and the low temperature section can be cooled by filling the inert gas with positive pressure to speed up the cooling rate. Exclusive design of the furnace body explosion-proof valve, safe and reliable.
 
Silicon Carbide Vacuum Sintering Furnace Application
silicon carbide sintering furnace Mainly used for recrystallization of silicon carbide
Main technical performance and indicators
Maximum operating temperature: 2450 ° C
Common temperature: 2400 ° C
Heating method: induction heating
Working gas in the furnace: nitrogen argon
Temperature uniformity: ≤ ± 10 ° C
Temperature control accuracy: ±1 °C

 
 

Volume (L) 192 350 484 1920
Rated temperature (°C) 2400 2400 2400 2400
Limit temperature (°C) 2450 2450 2450 2450
Effective heating zone (mm) 400X400X1200 500X500X1400 550X550X1600 800X800X3000
Power (KW) 150 250 350 550
Frequency (HZ) 1500 1000 1000 1000
Temperature control method Japanese island electric thermostat
heating method Induction heating
Vacuum system Spool valve vacuum pump + Roots vacuum pump
Sintering atmosphere N²,Ar²and other gases
Rated power supply voltage (V) 380
Rated heating voltage (V) According to the design, configure the transformer
Vacuum limit (pa) 40(vacuum cold state)
 

 
 

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Contact Person : Mr. furnacess
Tel : +86 1987546789
Fax : 86-10-34242423-33
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